triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 1 9.6 mm discrete hfet TGF4260-SCC key features and performance ? 9600 m x 0.5 m hfet ? nominal pout of 37dbm at 6 ghz ? nominal gain of 9.5db at 6 ghz ? nominal pae of 52% at 6 ghz ? frequency range: dc - 10.5 ghz ? suitable for high reliability applications ? 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in) description the triquint TGF4260-SCC is a single gate 9.6 mm discrete gaas heterostructure field effect transistor (hfet) designed for high efficiency power applications up to 10.5 ghz in class a and class ab operation. typical performance at 6 ghz is 37dbm power output, 9.5 db gain, and 52% pae. bond pad and backside metallization are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. the TGF4260-SCC is readily assembled using automatic equipment. primary applications ? cellular base stations ? high-reliability space ? military
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 2 table i maximum ratings symbol parameter 1/ value notes v ds drain to source voltage 12 v v gs gate to source voltage range 0 to -5.0 volts p d power dissipation 6.8 w 2/ t ch operating channel temperature 150 c 3/, 4 / t stg storage temperature -65 to 200 c t m mounting temperature (30 seconds) 320 c 1/ these ratings represent the maximum values for this device. stresses beyond those listed under ?maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?dc probe characteristics? is not implied. exposure to maximum rated conditions for extended periods may affect device reliability. 2/ when operated at this bias condition with a base plate temperature of 70 0 c, the mttf life is reduced from 1.7 e+12 to 3 e+9 hours. 3/ junction temperature will directly affect the device mean time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels 4/ these ratings apply to each individual fet TGF4260-SCC
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 3 table ii dc probe characteristics (t a = 25 c, nominal) symbol parameter minimum typical maximum unit note i dss saturated drain current -- 2352 -- ma 1/ g m transconductance -- 1584 -- ms 1/ v p pinch-off voltage 1 1.85 3 v 2/ v bgs breakdown voltage gate-source 17 22 30 v 2/ v bgd breakdown voltage gate-drain 17 22 30 v 2/ 1/ total for eight fets 2/ v p , v bgs , and v bgd are negative. table iii electrical characteristics (t a = 25 c, nominal) bias conditions: vd = 8.5 v, id = 520 ma symbol parameter typical unit pout output power 37 dbm gp power gain 9.5 db pae power added efficiency 52 % TGF4260-SCC table iv thermal information* parameter test conditions t ch ( o c) r jc ( c/w) t m (hrs) r jc thermal resistance (channel to backside of carrier) vd = 8.5 v i d = 520 ma pdiss = 6.8 w 101.64 7.16 1.7 e+12 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. * the thermal information is a result of a detailed thermal model.
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 4 TGF4260-SCC typical performance (t a = 25 c, nominal) bias conditions: f = 6 ghz, vd = 8.5 v, iq = 795 ma 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 16 18 20 22 24 26 28 30 input power (dbm) drain current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345678910 drain voltage (v) drain current (a) -2.25 v -2.0 v -1.75 v -1.5 v -1.25 v -1.0 v -0.75 v vg
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 5 TGF4260-SCC typical performance 8 9 10 11 12 13 16 18 20 22 24 26 28 30 input power (dbm) gain (db) 0 5 10 15 20 25 30 35 40 45 50 55 16 18 20 22 24 26 28 30 input power (dbm) pae (%) bias conditions: f = 6 ghz, vd = 8.5 v, iq = 795 ma
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 6 typical performance bias conditions: f = 6 ghz, vd = 8.5 v, iq = 795 ma 27 29 31 33 35 37 39 16 18 20 22 24 26 28 30 input power (dbm) output power (dbm) TGF4260-SCC bias conditions: f = 6 ghz, vd = 8.5 v, id = 520 ma
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 7 freq (ghz) s11 mag db ang ( ) deg s21 mag db ang ( ) deg s12 mag db ang ( ) deg s22 mag db ang ( ) deg 0.5 -0.377 -142.378 16.279 105.604 -35.345 18.236 -2.334 -175.122 1.0 -0.368 -160.678 10.599 93.104 -35.031 9.671 -2.176 -176.556 1.5 -0.364 -167.064 7.118 86.611 -35.026 6.854 -2.126 -176.745 2.0 -0.360 -170.296 4.606 81.733 -35.090 5.622 -2.086 -176.594 2.5 -0.356 -172.250 2.630 77.536 -35.194 5.098 -2.044 -176.322 3.0 -0.351 -173.564 0.994 73.710 -35.320 5.000 -1.998 -176.008 3.5 -0.346 -174.511 -0.409 70.122 -35.473 5.217 -1.947 -175.688 4.0 -0.340 -175.232 -1.643 66.712 -35.645 5.705 -1.892 -175.382 4.5 -0.333 -175.802 -2.750 63.445 -35.831 6.448 -1.834 -175.099 5.0 -0.327 -176.269 -3.756 60.305 -36.027 7.442 -1.774 -174.846 5.5 -0.320 -176.662 -4.682 57.281 -36.233 8.690 -1.712 -174.627 6.0 -0.313 -177.000 -5.543 54.367 -36.444 10.198 -1.648 -174.441 6.5 -0.305 -177.297 -6.349 51.559 -36.648 11.968 -1.585 -174.290 7.0 -0.298 -177.562 -7.108 48.855 -36.845 14.002 -1.522 -174.172 7.5 -0.290 -177.803 -7.828 46.254 -37.028 16.295 -1.459 -174.084 8.0 -0.283 -178.025 -8.513 43.753 -37.190 18.833 -1.398 -174.026 8.5 -0.276 -178.231 -9.167 41.353 -37.323 21.596 -1.338 -173.995 9.0 -0.269 -178.424 -9.794 39.050 -37.419 24.556 -1.280 -173.988 9.5 -0.262 -178.607 -10.398 36.846 -37.484 27.673 -1.224 -174.004 10 -0.255 -178.782 -10.979 34.737 -37.503 30.902 -1.170 -174.039 10.5 -0.249 -178.949 -11.540 32.724 -37.477 34.192 -1.119 -174.091 11.0 -0.242 -179.110 -12.084 30.804 -37.406 37.493 -1.069 -174.160 11.5 -0.236 -179.266 -12.611 28.976 -37.291 40.755 -1.022 -174.241 12.0 -0.230 -179.417 -13.124 27.239 -37.140 43.932 -0.977 -174.335 12.5 -0.225 -179.564 -13.622 25.593 -36.948 46.987 -0.934 -174.438 13.0 -0.219 -179.708 -14.107 24.034 -36.719 49.893 -0.893 -174.551 13.5 -0.214 -179.848 -14.581 22.563 -36.472 52.628 -0.854 -174.670 14.0 -0.209 -179.986 -15.043 21.177 -36.199 55.182 -0.817 -174.796 unmatched modeled s-parameter data for the TGF4260-SCC TGF4260-SCC
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 8 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. TGF4260-SCC mechanical drawing
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet march 31, 2003 9 TGF4260-SCC assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. note: die are shipped in gel pack unless otherwise specified.
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